BSZ440N10NS3 G Infineon Technologies, BSZ440N10NS3 G Datasheet - Page 6

• Manufacturer Part Number: BSZ440N10NS3 G
• Description: MOSFET N-CH 100V 18A TSDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ440N10NS3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.7V @ 12µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 50V
• Power - Max: 29W
• Mounting Type: Surface Mount
• Package / Case: 8-TSDSON
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.044 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 29 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ440N10NS3 G; BSZ440N10NS3 GINTR; SP000482442

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
10
90
80
70
60
50
40
30
20
10
0
4
3
2
1
0
-60
0
T
V
I
-20
20
f
20
V
V
T
j
DS
60
40
[°C]
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
1000
V
100
3.5
2.5
1.5
0.5
10
4
3
2
1
0
1
-60
0
T
I
T
V
-20
0.5
V
20
V
T
SD
j
60
[°C]
1
[V]
BSZ440N10NS3 G
100
1.5
140
180
2