AO3409 Alpha & Omega Semiconductor Inc, AO3409 Datasheet - Page 4

• Manufacturer Part Number: AO3409
• Description: MOSFET P-CH -30V -2.6A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1007-2

AO3409
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100.0
9
8
7
6
5
4
3
2
1
0
10.0
1.0
0.1
0
0.01
0.1
0.1
10
0.00001
1
R
limited
T
T
Figure 9: Maximum Forward Biased Safe
J(Max)
A
DS(ON)
1
=25°C
Figure 7: Gate-Charge Characteristics
=150°C
D=T
T
R
J,PK
Operating Area (Note E)
JA
2
1s
=90°C/W
on
=T
V
I
0.0001
D
/T
DS
=-2.6A
A
1
10s
+P
=-15V
Single Pulse
DM
3
-V
-Q
0.1s
DS
.Z
g
(nC)
(Volts)
JA
.R
DC
Figure 11: Normalized Maximum Transient Thermal Impedance
1ms
4
0.001
JA
100 s
10ms
10
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10 s
6
0.01
100
7
Pulse Width (s)
0.1
500
400
300
200
100
20
15
10
5
0
0.001
0
0
Figure 10: Single Pulse Power Rating Junction-to-
C
C
rss
0.01
oss
1
Figure 8: Capacitance Characteristics
5
P
D
0.1
T
10
Ambient (Note E)
on
Pulse Width (s)
10
T
-V
DS
1
15
(Volts)
C
iss
10
100
20
T
T
J(Max)
A
=25°C
www.aosmd.com
370
=150°C
18
22
100
9
25
1000
1000
30