AO3409 Alpha & Omega Semiconductor Inc, AO3409 Datasheet - Page 3

• Manufacturer Part Number: AO3409
• Description: MOSFET P-CH -30V -2.6A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1007-2

AO3409
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
200
150
100
20
15
10
50
5
0
300
250
200
150
100
50
0
0
0
3
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
1
4
Fig 1: On-Region Characteristics
1
5
2
-10V
2
Gate Voltage
-V
-V
DS
6
GS
-I
(Volts)
D
3
(Volts)
(A)
V
GS
7
3
=-4.5V
I
V
D
V
=-2A
GS
4
GS
-8V
=-10V
8
-5.5V
=-4.5V
-6V
-5V
125°C
-4V
-3.5V
-3.0V
25°C
4
5
9
10
5
6
1.0E+01
1.0E+00
10
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
8
6
4
2
0
1
1
0
0.0
25
Figure 4: On-Resistance vs. Junction
Figure 2: Transfer Characteristics
2
Figure 6: Body-Diode Characteristics
0.2
50
125°C
V
Temperature (°C)
DS
Temperature
0.4
=-5V
3
-V
75
GS
-V
(Volts)
25°C
V
SD
GS
100
0.6
(Volts)
=-10V
4
25°C
125°C
125
V
0.8
GS
I
D
=-4.5V
=-2A
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370
5
18
22
150
9
1.0
175
6
1.2