BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet
BSD316SN L6327
Specifications of BSD316SN L6327
BSD316SN L6327INTR
SP000442462
Related parts for BSD316SN L6327
BSD316SN L6327 Summary of contents
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OptiMOS 2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSD316SN PG-SOT363 L6327: 3000 ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 1) 2 Performed on 40mm FR4 PCB. The traces are ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation =f tot A 0.5 0.375 0.25 0.125 Safe operating area =f =25 ° parameter ...
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Typ. output characteristics =f =25 ° parameter 4 Typ. transfer characteristics =f |>2 ...
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Drain-source on-state resistance = DS(on 320 280 240 98 % 200 160 120 -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω =f parameter: T j(start Drain-source breakdown voltage =f =250 µA V BR(DSS) ...
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Package Outline: Footprint: Reflow soldering: Rev 2.3 SOT363 Packing: page 8 BSD316SN 2011-07-14 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...