NTE4151PT1G ON Semiconductor, NTE4151PT1G Datasheet - Page 4

• Manufacturer Part Number: NTE4151PT1G
• Description: MOSFET P-CH 20V 760MA SC-89
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTE4151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 760mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 156pF @ 5V
• Power - Max: 313mW
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.36 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.76 A
• Power Dissipation: 313 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.36Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTE4151PT1GOSTR

5
4
3
2
1
0
0.001
0
0.01
1.0
0.1
Q
Figure 7. Gate−to−Source Voltage vs. Total
GS
0.00001
0.05
0.01
D = 0.5
0.1
0.02
0.2
SINGLE PULSE
0.4
Q
Q
GD
G
, TOTAL GATE CHARGE (nC)
0.8
0.0001
Gate Charge
Q
T
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
0.001
1.6
Figure 9. Normalized Thermal Response
V
I
T
D
A
DS
= −0.3 A
= 25°C
= −10 V
2.0
NTA4151P, NTE4151P
0.01
http://onsemi.com
2.4
t, TIME (s)
4
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Figure 8. Diode Forward Voltage vs. Current
V
−V
GS
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
1.0
0.4
T
J
= 125°C
10
0.6
T
J
= 25°C
100
0.8
1000
1.0