NTE4151PT1G ON Semiconductor, NTE4151PT1G Datasheet - Page 2

• Manufacturer Part Number: NTE4151PT1G
• Description: MOSFET P-CH 20V 760MA SC-89
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTE4151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 760mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 156pF @ 5V
• Power - Max: 313mW
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.36 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.76 A
• Power Dissipation: 313 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.36Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTE4151PT1GOSTR

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
NTA4151PT1
NTA4151PT1G
NTE4151PT1G
Parameter
Device
(T
J
V
= 25°C unless otherwise stated)
Symbol
V
Q
R
Q
td
Marking
(BR)DSS
td
C
C
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
V
g
DSS
GSS
G(TH)
(OFF)
OSS
RSS
(ON)
FS
ISS
t
t
TN
TN
TM
GS
GD
SD
r
f
NTA4151P, NTE4151P
http://onsemi.com
V
V
V
V
V
V
I
V
GS
GS
GS
GS
GS
V
V
V
V
DS
D
V
DS
GS
DS
GS
GS
GS
= −200 mA, R
= −4.5 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −4.5 V, V
= −10 V, I
Test Condition
= V
2
= 0 V, V
= 0 V, I
= 0 V, f = 1.0 MHz,
(Pb−Free)
(Pb−Free)
= 0 V, I
= 0 V, V
Package
V
SC−75
SC−75
SC−89
I
DS
D
GS
= −0.3 A
= −5.0 V
, I
S
D
D
GS
D
DS
D
D
D
= −250 mA
= −250 mA
DD
DD
= −250 mA
= −250 mA
= −350 mA
= −300 mA
= −150 mA
= ±4.5 V
G
= −16 V
= −10 V,
= −10 V,
= 10 W
−0.45
Min
−20
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Shipping
0.125
0.325
−0.72
$1.0
−1.0
0.26
0.35
0.49
20.4
Typ
156
0.4
2.1
0.5
8.0
8.2
28
18
29
†
−100
$10
Max
0.36
0.45
−1.1
1.0
Unit
nA
mA
nC
pF
ns
W
V
V
S
V