TPCP8002(TE85L,F,M Toshiba, TPCP8002(TE85L,F,M Datasheet - Page 4

• Manufacturer Part Number: TPCP8002(TE85L,F,M
• Description: MOSFET N-CH 20V 9.1A PS8
• Manufacturer: Toshiba

Specifications of TPCP8002(TE85L,F,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.1A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3700pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCP8002(TE85L,F); TPCP8002TE85LFMTR; TPCP8002TE85LFTR; TPCP8002TE85LFTR

100
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Single Pulse test
Common source
V DS = 10 V
Single Pulse test
Common source
VDS = 10 V
2
Drain−source voltage V
0.4
Gate−source voltage V
0.2
1.8
Drain current I
0.8
1
0.4
I
I
D
|Y
Ta = −55°C
D
– V
fs
– V
100°C
1.2
| – I
1.7
GS
DS
D
0.6
100°C
D
1.6
10
Ta = −55°C
DS
GS
(A)
Single Pulse test
Common source
25°C
V GS = 1.4 V
Ta = 25°C
25°C
0.8
(V)
(V)
2
1.5
1.6
100
1.0
2.4
4
0.2
0.8
0.6
0.4
100
20
16
12
0
10
8
4
0
1
1
0.1
0
0
3
Common source
Ta = 25°C
Single Pulse test
Drain−source voltage V
Gate−source voltage V
0.4
2
I D = 9.1 A
2
Drain current I
4.5
1
R
2.3
0.8
V
4
DS (ON)
1.9
I
DS
D
V GS = 2.5 V
– V
– V
DS
GS
– I
1.2
6
D
D
4.5
10
GS
(A)
DS
Single Pulse test
Single Pulse test
Common source
Common source
Ta = 25°C
Ta = 25°C
V GS = 1.4 V
1.6
8
(V)
(V)
TPCP8002
2007-01-16
1.8
1.7
1.6
1.5
100
10
2