TPCP8002(TE85L,F,M Toshiba, TPCP8002(TE85L,F,M Datasheet

TPCP8002(TE85L,F,M

Manufacturer Part Number

TPCP8002(TE85L,F,M

Description

MOSFET N-CH 20V 9.1A PS8

Manufacturer

Toshiba

Datasheet

1.TPCP8002TE85LFM.pdf (7 pages)

Specifications of TPCP8002(TE85L,F,M

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

10 mOhm @ 4.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

9.1A

Vgs(th) (max) @ Id

1.2V @ 200µA

Gate Charge (qg) @ Vgs

48nC @ 5V

Input Capacitance (ciss) @ Vds

3700pF @ 10V

Power - Max

840mW

Mounting Type

Surface Mount

Package / Case

2-3V1K

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TPCP8002(TE85L,F)
TPCP8002TE85LFMTR
TPCP8002TE85LFTR
TPCP8002TE85LFTR

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Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Lead (Pb)-Free

Small footprint due to small and thin package

Low drain-source ON-resistance

: R

High forward transfer admittance

:|Y

Low leakage current

: I

Enhancement mode

: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (t = 5 s)

(Note 2a)

Drain power dissipation (t = 5 s)

(Note 2b)

Single pulse avalanche energy

(Note 3)

Avalanche current

Repetitive avalanche energy

(Note 4)

Channel temperature

Storage temperature range

Note: For Notes 1 to 5, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

DSS

DS (ON)

| = 36 S (typ.)

= 0.5 to 1.2 V (V

= 10 µA (V

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristic

= 7 mΩ (typ.)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

Pulse

= 20 V)

= 20 kΩ)

(Note 1)

= 10 V, I

(Ta = 25°C)

= 0.2 mA)

Symbol

TPCP8002

DGR

GSS

DSS

stg

−55~150

Rating

0.168

36.4

1.68

0.84

21.5

±12

150

9.1

Unit

°C

Circuit Configuration

Marking

JEDEC

JEITA

TOSHIBA

1．Source

2．Source

3．Source

4．Gate

0.475

0.33±0.05

0.65

0.025

8002

5．Drain

6．Drain

7．Drain

8．Drain

(Note 5)

2.9±0.1

0.17±0.02

0.05

2-3V1K

TPCP8002

2007-01-16

―

Lot No.

0.28

1.12

0.28

0.8±0.05

+0.13

+0.1

Unit: mm

-0.11

-0.12

-0.11

0.05

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TPCP8002(TE85L,F,M Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) Notebook PC Applications Portable Equipment Applications • Lead (Pb)-Free • Small footprint due to small and thin package • Low drain-source ON-resistance : mΩ (typ.) DS (ON) • High forward transfer admittance :| (typ.) fs • Low leakage current : µ ...

Page 2

Thermal Characteristics Characteristic Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device ...

Page 3

Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time ...

Page 4

I – Common source 2 1.8 1 25°C Single Pulse test 1 0.2 0.4 0.6 0.8 Drain−source voltage V ( – V ...

Page 5

R – (ON) 20 Common source Pulse test 2.3,4.5,9 2 2.3,4.5,9 4 −80 − 120 Ambient temperature ...

Page 6

Device mounted on a glass- epoxy board (b) (Note 2b) 100.0 10.0 1.0 0.1 0.001 0.01 0.1 Pulse width t Safe operating area 100 I D max (pulse Single nonrepetitive pulse Ta ...

Page 7

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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