TPCF8103(TE85L,F) Toshiba, TPCF8103(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: TPCF8103(TE85L,F)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8103(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8103(TE85L,F); TPCF8103FTR

-100
-0.1
-10
-1
-0.1
*: Single pulse
Curves must be derated linearly
with increase in temperature
I D max (pulse)*
Ta = 25°C
Drain-source voltage V DS (V)
1000
100
Safe operating area
10
-1
1
1m
10 ms*
10m
-10
1 ms*
V DSS max
100m
-100
Pulse width t w (s)
Device mounted on a glass-epoxy board (b) (Note 2b)
r
th
Device mounted on a glass-epoxy board (a) (Note 2a)
1
6
– t
w
10
100
1000
TPCF8103
2006-11-16