TPCF8103(TE85L) Toshiba, TPCF8103(TE85L) Datasheet
TPCF8103(TE85L)
Specifications of TPCF8103(TE85L)
Related parts for TPCF8103(TE85L)
TPCF8103(TE85L) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Thermal Characteristics Characteristics Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Marking (Note 5) Lot code (month) F3C Part No. (or abbreviation code) Pin #1 Lot ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
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I – −5 −2.5 −4 −4.5 −2.8 −4 −5 −3 −3.5 −1.8 −3 − −1.5 V −1 Common source Ta = 25°C Pulse test 0 −0.2 −0.4 −0.6 −0.8 0 Drain-source voltage V DS ...
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R – (ON) 300 Common source −1.4 A Pulse test 250 −0 −1.8 V 200 −1 −2.7 A 150 −0.7 A 100 −2.5 V ...
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Safe operating area -100 I D max (pulse)* -10 1 ms Single pulse Ta = 25°C Curves must be derated linearly V DSS max with increase in temperature -0.1 -0.1 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...