IXFX180N10 IXYS, IXFX180N10 Datasheet - Page 2

• Manufacturer Part Number: IXFX180N10
• Description: MOSFET N-CH 100V 180A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX180N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 390nC @ 10V
• Input Capacitance (ciss) @ Vds: 10900pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 90 s
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 560000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.008
• Ciss, Typ, (pf): 10900
• Qg, Typ, (nc): 390
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 560
• Rthjc, Max, (ºc/w): 0.22
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 90A, -di/dt = 100A/μs
= 100A, V
= 50V, V
= 1Ω (External)
= 10V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
DS
GS
D
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V
= 0V, Note 1
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
45
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
10.90
0.15
3.55
1.94
Typ.
140
390
195
Typ.
1.1
13
76
50
90
65
55
0.22 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
180
720
Max.
250 ns
1.5
°C/W
μC
nC
nC
nC
nF
nF
nF
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS 247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
(IXFX) Outline
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
IXFX180N10
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXFK180N10
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190