IXFX180N10 IXYS, IXFX180N10 Datasheet

MOSFET N-CH 100V 180A PLUS247

IXFX180N10

Manufacturer Part Number
IXFX180N10
Description
MOSFET N-CH 100V 180A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheets

Specifications of IXFX180N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
390nC @ 10V
Input Capacitance (ciss) @ Vds
10900pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
90 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
180 A
Power Dissipation
560000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
10900
Qg, Typ, (nc)
390
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
560
Rthjc, Max, (ºc/w)
0.22
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX180N10
Manufacturer:
IXYS
Quantity:
1 500
Part Number:
IXFX180N10
Manufacturer:
IXYS
Quantity:
6 285
HiperFET
MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
Leads Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
MountingTorque
PLUS247
TO-264
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C ( Chip Capabitlty)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
Power
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 8mA
= 0.5 • I
DS
DSS
= 0V
, T
(PLUS247)
(TO-264)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFK180N10
IXFX180N10
20..120/4.5..27
-55 ... +150
-55 ... +150
100
Characteristic Values
Maximum Ratings
2.0
Min.
1.13/10
100
100
±20
±30
180
160
720
180
560
150
300
260
10
Typ.
3
5
6
±100 nA
Nm/lb.in.
100 μA
Max.
4.0
8 mΩ
2 mA
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
Features
Advantages
Applications
V
I
R
TO-264 (IXFK)
G = Gate
S = Source
PLUS247 (IXFX)
D25
International Standard Packages
High Current Handling Capability
Avalanche Rated
Fast intrinsic diode
Low Package Inductance
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Temperature and Lighting Controls
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
DS(on)
G
≤ ≤ ≤ ≤ ≤
=
=
D
HDMOS
S
D
TAB = Drain
8mΩ Ω Ω Ω Ω
100V
180A
= Drain
TM
DS98552D(02/09)
Process
(TAB)
(TAB)

Related parts for IXFX180N10

IXFX180N10 Summary of contents

Page 1

... D = ±20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved IXFK180N10 IXFX180N10 Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 180 160 720 JM 180 3 ≤ 150° 560 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 1.13/ Characteristic Values Min ...

Page 2

... I 55 DSS D D25 195 0.15 Characteristic Values Min. Typ. JM 1.1 13 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK180N10 IXFX180N10 TO-264 (IXFK) Outline Max 0.22 °C/W °C/W Max. 180 A 720 A 1.5 V PLUS 247 (IXFX) Outline TM 250 ns μ ...

Page 3

... T - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 180 External Lead Current Limit 160 140 120 100 -50 - Degrees Centigrade C IXFK180N10 IXFX180N10 3.5 4.0 4.5 5.0 = 90A Value 90A D 75 100 125 150 75 100 125 150 IXYS REF: F_180N10(9X)2-24-09-B ...

Page 4

... I - Amperes D Fig. 10. Gate Charge V = 50V 90A 10mA 100 150 200 250 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXFK180N10 IXFX180N10 = - 40ºC J 25ºC 125ºC 200 250 300 300 350 400 1 10 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 14. Forward-Bias Safe Operating Area 1,000 R Limit DS(on) 25µs 100µs 100 1ms 10ms 100ms 150º 75ºC C Single Pulse 1 100 1 IXFK180N10 IXFX180N10 @ T = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 10 100 V - Volts DS IXYS REF: F_180N10(9X)2-24-09-B ...

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