IXFT32N50Q IXYS, IXFT32N50Q Datasheet - Page 2

• Manufacturer Part Number: IXFT32N50Q
• Description: MOSFET N-CH 500V 32A TO-268
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFT32N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4925pF @ 25V
• Power - Max: 416W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 28 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 416 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 3950
• Qg, Typ, (nc): 153
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
thJC
thCK
SD
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
F
GS
DS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
(TO-247)
, V
= I
GS
GS
GS
G
S
= 2 Ω (External),
GS
, -di/dt = 100 A/µs, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
(T
(T
R
DSS
DSS
= 100 V
J
J
= 25°C, unless otherwise specified)
, I
, I
= 25°C, unless otherwise specified)
D
D
JM
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
18
Characteristic Values
Characteristic Values
3950 4925
0.75
0.25
typ.
typ.
640 800
210 260
153 190
7.5
28
35
42
75
20
26
85 105
0.30
max.
max.
45
50
95
25
32
128
250
1.5
32
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
3 - Source
20.80
15.75
19.81
Min.
2
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Millimeter
4.7
2.2
2.2
1.0
.4
3
IXFH 32N50Q
IXFT 32N50Q
BSC
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
6,534,343
.8
2 - Drain
Tab - Drain
0.205
0.232
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242
Inches
6,583,505
BSC
0.225
0.252
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216