IXFT32N50Q IXYS, IXFT32N50Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFT32N50Q
Manufacturer Part Number
IXFT32N50Q
Description
MOSFET N-CH 500V 32A TO-268
Specifications of IXFT32N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4925pF @ 25V
Power - Max
416W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Forward Transconductance Gfs (max / Min)
28 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
416 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3950
Qg, Typ, (nc)
153
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
I
I
R
© 2004 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
HiPerFET
Power MOSFETs
Q-Class
GSS
DM
DSS
D25
AR
N-Channel Enhancement Mode
Avalanche Rated, Low Q
JM
L
GS(th)
GSM
AR
J
stg
DSS
DS(on)
DSS
DGR
GS
AS
D
d
Test Conditions
V
V
V
V
V
V
Note 1
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
S
GS
DS
GS
DS
GS
GS
C
C
C
C
J
C
J
J
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C; pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 250 uA
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
g
= 0
, High dv/dt
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
IXFH 32N50Q
IXFT 32N50Q
,
JM
500
min.
2.5
-55 ... + 150
-55 ... + 150
Characteristic Values
1.13/10
1500
Maximum Ratings
150
500
500
±20
±30
typ.
128
416
300
45
32
32
5
6
4
±100
0.16
100
max.
4.5
Nm/lb.in.
1
V/ns
mJ
mJ
mA
°C
°C
°C
°C
nA
µA
W
V
V
Ω
V
V
V
V
A
A
A
g
g
500 V 32 A 0.16 Ω Ω Ω Ω Ω
500 V 32 A 0.16 Ω Ω Ω Ω Ω
Features
Advantages
G = Gate
S = Source
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
t
V
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
≤ ≤ ≤ ≤ ≤ 250 ns
DS (on)
I
G
D25
TAB = Drain
S
D
g
= Drain
DS98596E(02/04)
process
R
DS(on)
(TAB)
(TAB)
Related parts for IXFT32N50Q
IXFT32N50Q Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 Note 1 © 2004 IXYS All rights reserved IXFH 32N50Q IXFT 32N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 32 128 1500 ≤ DSS 416 -55 ... + 150 150 -55 ... + 150 300 1.13/ Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... A/µ Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... Volts DS Figure 3. R normalized to 15A/25 DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature 40 IXF_32N50Q 32 IXF_30N50Q -50 - Degrees C C © 2004 IXYS All rights reserved vs Tj= 100 125 150 IXFH 32N50Q IXFT 32N50Q Figure 2. Output Characteristics at 125 125 ...
... V - Volts SD Figure 10. Transient Thermal Resistance 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 200 250 =25 = 1.0 1.2 -2 ...
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