STP30NM50N STMicroelectronics, STP30NM50N Datasheet - Page 17

• Manufacturer Part Number: STP30NM50N
• Description: MOSFET N-CH 500V 27A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 2740pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Forward Transconductance Gfs (max / Min): 23 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 27 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8790-5

STB/I/F/P/W30NM50N
6
Revision history
Table 9.
23-Sep-2008
19-Feb-2008
Date
Document revision history
Revision
1
2
First release
Document status promoted from preliminary data to datasheet.
Changes
Revision history
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