IXTH15N50L2 IXYS, IXTH15N50L2 Datasheet - Page 4

• Manufacturer Part Number: IXTH15N50L2
• Description: MOSFET N-CH 15A 500V TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH15N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 4080pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.480
• Ciss, Typ, (pf): 4080
• Qg, Typ, (nc): 123
• Trr, Typ, (ns): 570
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
10
18
16
14
12
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
0.50
3.0
0
f
3.5
0.55
= 1 MHz
5
4.0
Fig. 9. Forward Voltage Drop of
0.60
10
T
Fig. 7. Input Admittance
4.5
J
0.65
= 125ºC
Fig. 11. Capacitance
5.0
Intrinsic Diode
15
0.70
V
V
V
SD
DS
GS
5.5
- Volts
- Volts
- Volts
0.75
20
T
J
6.0
= 125ºC
- 40ºC
0.80
25ºC
25
6.5
0.85
T
C iss
C oss
C rss
7.0
J
30
= 25ºC
0.90
7.5
35
0.95
8.0
1.00
8.5
40
1.000
0.100
0.010
12
11
10
16
14
12
10
0.0001
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
0
V
I
I
2
D
G
20
DS
Fig. 12. Maximum Transient Thermal
= 7.5A
= 10mA
= 250V
0.001
4
40
Fig. 8. Transconductance
6
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
60
G
I
- NanoCoulombs
D
0.01
Impedance
8
- Amperes
80
10
100
0.1
12
IXTH15N50L2
IXTP15N50L2
T
120
J
= - 40ºC
14
140
16
1
125ºC
25ºC
160
18
180
20
10