IXTH15N50L2 IXYS, IXTH15N50L2 Datasheet - Page 3

• Manufacturer Part Number: IXTH15N50L2
• Description: MOSFET N-CH 15A 500V TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH15N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 4080pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.480
• Ciss, Typ, (pf): 4080
• Qg, Typ, (nc): 123
• Trr, Typ, (ns): 570
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
0
Fig. 5. R
V
GS
1
5
2
= 10V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
10
2
4
vs. Drain Current
Normalized to I
V
I
DS
D
V
15
@ 125ºC
@ 25ºC
3
6
DS
- Amperes
- Volts
V
- Volts
GS
V
GS
= 20V
20
4
8
12V
10V
= 20V
9V
12V
10V
9V
D
T
25
10
= 7.5A Value
J
5
= 125ºC
8V
7V
6V
5V
T
J
30
12
8V
6V
5V
6
7V
= 25ºC
35
14
7
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
35
30
25
20
15
10
16
14
12
10
8
6
4
2
0
5
0
-50
-50
0
Fig. 4. R
V
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
5
DS(on)
vs. Junction Temperature
0
0
T
Case Temperature
10
T
C
Normalized to I
V
J
- Degrees Centigrade
25
GS
25
- Degrees Centigrade
V
DS
= 20V
@ 25ºC
14V
12V
10V
- Volts
50
15
50
I
9V
8V
7V
6V
5V
D
75
75
IXTH15N50L2
IXTP15N50L2
= 15A
20
D
= 7.5A Value
100
100
25
I
125
125
D
= 7.5A
150
150
30