STW24NM65N STMicroelectronics, STW24NM65N Datasheet - Page 4

• Manufacturer Part Number: STW24NM65N
• Description: MOSFET N-CH 650V 19A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW24NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7035-5

Electrical ratings
4/19
Table 4.
Symbol
E
I
AS
AS
Avalanche characteristics
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
J
=25 °C, I
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
Parameter
D
=I
AS
J
, V
max)
DD
= 50 V)
Max value
500
6
Unit
mJ
A