STW23NM60ND STMicroelectronics, STW23NM60ND Datasheet - Page 8
STW23NM60ND
Manufacturer Part Number
STW23NM60ND
Description
MOSFET N-CH 600V 19.5A TO-247
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STB23NM60ND.pdf
(18 pages)
Specifications of STW23NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 50V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
19.5 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8454-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW23NM60ND
Manufacturer:
ROHM
Quantity:
1 500
Electrical characteristics
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Doc ID 14367 Rev 3
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
STB/I/F/P/W23NM60ND
VDSS
vs temperature