STW160N75F3 STMicroelectronics, STW160N75F3 Datasheet - Page 3

• Manufacturer Part Number: STW160N75F3
• Description: MOSFET N-CH 75V 120A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW160N75F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 6750pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7619-5; STW160N75F3

STB160N75F3 - STP160N75F3 - STW160N75F3
1
Electrical ratings
Table 2.
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
4. Starting TJ = 25°C, I
Table 3.
1. When mounted on 1 inch
Rthj-pcb
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
E
I
SD
P
I
I
DM
V
V
T
AS
D
D
TOT
T
GS
T
DS
stg
(1)
(1)
< 120A, di/dt < 1100 A/µs, V
(2)
j
l
(4)
(3)
(1)
Absolute maximum ratings
Thermal resistance
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb
Maximum lead temperature for soldering
purpose
D
= 60A, V
² FR4 2 oz Cu
Parameter
Parameter
DD
DD
= 25V
C
< 60V, T
= 25°C
GS
= 0)
J
< T
C
C
= 25°C
= 100°C
JMAX
TO-220
62.5
--
-55 to 175
Value
TO-247
± 20
120
120
480
330
600
Value
2.2
75
20
0.45
300
50
--
Electrical ratings
D²PAK
50
--
W/°C
Unit
V/ns
mJ
°C
W
V
V
A
A
A
°C/W
°C/W
°C/W
Unit
°C
3/16