STW90NF20 STMicroelectronics, STW90NF20 Datasheet - Page 5

• Manufacturer Part Number: STW90NF20
• Description: MOSFET N-CH 200V 83A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW90NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 164nC @ 10V
• Input Capacitance (ciss) @ Vds: 5736pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 83 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8464-5

STW90NF20
Table 6.
Table 7.
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
DD
G
= 4.7 Ω, V
I
I
di/dt = 100 A/µs
(see Figure 19)
I
di/dt = 100 A/µs
T
SD
SD
SD
= 100 V, I
Test conditions
j
= 150°C
= 83 A, V
= 83 A,V
=83 A, V
Test conditions
GS
D
(see Figure 19)
= 41.5 A
DD
DD
= 10 V,
GS
= 100 V
= 100 V
= 0
Min.
Electrical characteristics
Min.
Typ.
138
148
142
24
Typ.
200
235
1.6
2.2
16
18
Max.
Max. Unit
332
1.6
83
Unit
ns
ns
ns
ns
µC
µC
ns
ns
A
A
V
A
A
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