STW15NK90Z STMicroelectronics, STW15NK90Z Datasheet - Page 3

• Manufacturer Part Number: STW15NK90Z
• Description: MOSFET N-CH 900V 15A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW15NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 256nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3557-5

STW15NK90Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
Symbol
R
Symbol
V
R
Symbol
thj-case
ESD (G-S)
dv/dt
SD
E
I
V
I
thj-a
AR
P
T
DM
AS
V
V
T
DGR
l
T
I
I
TOT
≤ 15 A, di/dt ≤ 200A/µs, V
DS
GS
stg
D
D
J
(1)
(2)
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1,5KΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
DD
Parameter
≤ 900 V, T
Parameter
Parameter
C
GS
= 25°C
GS
j
= 20KΩ)
≤ T
= 0)
JMAX
C
C
=100°C
= 25°C
Value
0.36
300
50
-55 to 150
Value
Value
6000
360
± 30
2.77
900
900
350
15
9.5
4.5
15
60
Electrical ratings
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
mJ
°C
°C
W
A
V
V
V
A
A
A
V
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