STP23NM60ND STMicroelectronics, STP23NM60ND Datasheet - Page 4

• Manufacturer Part Number: STP23NM60ND
• Description: MOSFET N-CH 600V 19.5A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP23NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 50V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8445-5

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
1.
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
increases from 0 to 80% V
I
C
GS(th)
DS(on)
C
Q
Q
Characteristic value at turn off on inductive load
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss eq.
oss
rss
iss
gs
gd
(1)
g
(1)
(2)
= 25 °C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 14367 Rev 3
V
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 19)
I
V
V
V
V
V
V
V
D
DS
DS
GS
GS
DD
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= V
= 10 V, I
=15 V, I
= 50 V, f =1 MHz,
= 0
= 0, V
= 10 V
= 480 V, I
= Max rating,
= ±20 V
= 10 V
= Max rating,@125 °C
= 480 V, I
Test conditions
Test conditions
GS
, I
DS
D
D
GS
D
= 0 to 480 V
= 10 A
= 250 µA
D
D
= 10 A
= 0
= 19.5 A
= 19.5 A,
Min.
Min.
600
3
-
-
-
-
-
STB/I/F/P/W23NM60ND
0.150 0.180
2050
Typ.
Typ.
318
17
80
70
10
30
30
8
4
4
oss
Max.
Max.
100
100
when V
1
5
-
-
-
-
-
DS
Unit
V/ns
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
S
V
V
Ω
Ω