STW20NM60 STMicroelectronics, STW20NM60 Datasheet - Page 16

• Manufacturer Part Number: STW20NM60
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW20NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3263-5

Packaging mechanical data
5
16/18
* on sales type
DIM.
D1
A0
B0
K0
P0
P1
P2
W
D
E
R
F
T
TAPE MECHANICAL DATA
Packaging mechanical data
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
mm
2
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
12.1
0.35 0.0098 0.0137
24.3
11.6
1.6
4.1
2.1
5.0
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197