STP20NM60FP STMicroelectronics, STP20NM60FP Datasheet - Page 2

• Manufacturer Part Number: STP20NM60FP
• Description: MOSFET N-CH 600V 20A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM60FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2771-5

STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1)
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Rthj-case
Rthj-amb
V
dv/dt (1)
Symbol
Symbol
Symbol
R
I
V
I
(BR)DSS
SD
V
DM
P
V
I
I
V
V
E
DS(on)
GS(th)
T
GSS
I
DSS
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
D
D
AS
j
l
( )
20 A, di/dt
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Parameter
400 A/µs,
j
DS
= 25 °C, I
= 0)
V
GS
DD
= 0)
D
C
V
GS
Parameter
Parameter
= I
= 25°C
(BR)/DSS,
GS
j
= 20 k )
max)
AR
I
V
V
V
V
D
= 0)
DS
DS
GS
DS
GS
, V
= 250 µA, V
= Max Rating, T
DD
= Max Rating
= ± 30V
= V
= 10V, I
C
C
CASE
T
Test Conditions
= 25°C
= 100°C
j
= 50 V)
GS
T
, I
JMAX
=25°C UNLESS OTHERWISE SPECIFIED)
D
D
= 10 A
GS
= 250 µA
= 0
C
= 125°C
TO-220/D²PAK/
TO-220/D²PAK/
I²PAK/TO-247
I²PAK/TO-247
Min.
600
3
12.6
0.65
192
1.2
20
80
--
Max. Value
-65 to 150
Value
62.5
600
600
±30
150
300
650
Typ.
0.25
15
10
4
TO-220FP
TO-220FP
12.6 (*)
20 (*)
80 (*)
2500
0.36
2.8
45
Max.
±100
0.29
10
1
5
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
Unit
mJ
µA
µA
µA
°C
°C
°C
W
V
V
V
A
A
A
V
A
V
V