STB300NH02L STMicroelectronics, STB300NH02L Datasheet - Page 3
![MOSFET N-CH 24V 120A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB300NH02L
Manufacturer Part Number
STB300NH02L
Description
MOSFET N-CH 24V 120A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP300NH02L.pdf
(14 pages)
Specifications of STB300NH02L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
109.4nC @ 10V
Input Capacitance (ciss) @ Vds
7055pF @ 15V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
24V
On Resistance Rds(on)
1.4mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0018 Ohms
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7945-2
STB300NH02L
STB300NH02L
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB300NH02L
Manufacturer:
ST
Quantity:
12 500
STB300NH02L - STP300NH02L
1
Electrical ratings
Table 2.
1. This value is silicon limited
2. Pulse width limited by safe operating area
3. This value is rated according Rthj-case
Table 3.
Table 4.
1. Starting Tj = 25°C, I
Rthj-case
Rthj-amb
Symbol
Symbol
P
Symbol
I
E
DM
I
I
TOT
V
V
D
D
AS
I
T
DS
GS
AV
(1)
(1)
j
(2)
(1)
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Not-repetitive avalanche current
(pulse width limited by Tj max)
Single pulse avalanche energy
D
= I
AV
, V
DD
= 20V
Parameter
Parameter
Parameter
C
= 25°C
GS
= 0)
C
C
= 25°C
= 100°C
Max value
-55 to 175
Value
Value
± 20
62.5
120
120
480
300
0.5
1.6
24
60
2
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
Unit
°C
W
V
V
A
A
A
A
J
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