IXTC200N085T IXYS, IXTC200N085T Datasheet - Page 4

• Manufacturer Part Number: IXTC200N085T
• Description: MOSFET N-CH 85V 110A ISOPLUS220
• Manufacturer: IXYS

Specifications of IXTC200N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 110 A
• Power Dissipation: 150 W
• Mounting Style: SMD/SMT
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 1
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
270
240
210
180
150
120
100
270
240
210
180
150
120
90
60
30
90
60
30
0
0
0.4
0
3
f = 1 MHz
0.5
5
3.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4
0.7
T
Intrinsic Diode
J
15
= 150ºC
V
V
V
GS
SD
DS
4.5
0.8
- Volts
- Volts
- Volts
20
C iss
C oss
C rss
0.9
5
25
T
T
J
J
1
= 25ºC
= -40ºC
150ºC
5.5
25ºC
30
1.1
6
35
1.2
1.3
6.5
40
10.00
1.00
0.10
0.01
180
160
140
120
100
80
60
40
20
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
30
= 25A
= 10mA
20
= 43V
Fig. 12. Maximum Transient Thermal
0.001
60
Fig. 8. Transconductance
40
90
Q
Fig. 10. Gate Charge
Pulse W idth - Seconds
G
- NanoCoulombs
I
60
D
0.01
120
- Amperes
Impedance
T
J
= - 40ºC
150
80
150ºC
IXTC200N085T
25ºC
180
0.1
100
210
120
240
1
140
270
160
300
10