IXTC200N085T IXYS, IXTC200N085T Datasheet - Page 2

• Manufacturer Part Number: IXTC200N085T
• Description: MOSFET N-CH 85V 110A ISOPLUS220
• Manufacturer: IXYS

Specifications of IXTC200N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 110 A
• Power Dissipation: 150 W
• Mounting Style: SMD/SMT
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 1
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Notes: 1.
SM
d(on)
d(off)
S
r
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents:
fs
iss
oss
rss
thJC
thCS
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineering
lots; but also may yet contain some information supplied during a pre-production design
evaluation. IXYS reserves the right to change limits, test conditions, and dimensions
without notice.
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;
V
V
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/μs
= 40 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 0 V
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
GS
D
DS
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0.5 V
= 0 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
, I
4,931,844
5,017,508
5,034,796
D
D
= 25 A
(T
= 25 A
J
= 25°C unless otherwise specified)
T
J
5,049,961
5,063,307
5,187,117
= 25°C unless otherwise specified)
Characteristic Values
Min.
Min.
5,237,481
5,381,025
5,486,715
75
Characteristic Values
7600
1100
Typ.
Typ.
120
230
160
0.5
29
65
55
47
40
50
90
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
220
600
1.0 °C/W
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
ns
ns
S
A
V
A
ISOPLUS220 (IXTC) Outline
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
6,683,344
6,710,405 B2
6,710,463
IXTC200N085T
1.Gate
3.Sourc
6,727,585
6,759,692
6,771,478 B2
e
2. Drain
7,005,734 B2 7,157,338B2
7,063,975 B2
7,071,537