IXTH76P10T IXYS, IXTH76P10T Datasheet - Page 5

• Manufacturer Part Number: IXTH76P10T
• Description: MOSFET P-CH 100V 76A TO-247
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTH76P10T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 13700pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -76
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 13700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
24
23
22
21
20
19
18
17
16
200
160
120
44
40
36
32
28
24
20
80
40
0
-36
25
0
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
-40
35
2
t
T
V
r
J
DS
I
T
= 125ºC, V
D
J
Fig. 13. Resistive Turn-on Rise Time vs.
= - 50V
-44
= 125ºC, 25ºC
= - 76A
45
4
I
D
t
-48
d(on)
GS
= - 38A
6
55
= -10V
Junction Temperature
- - - -
Gate Resistance
T
Drain Current
-52
J
R
- Degrees Centigrade
8
I
65
G
D
- Ohms
- Amperes
-56
10
75
t
R
V
I
f
DS
G
D
= 1Ω, V
-60
= - 76A, - 38A
= - 50V
12
85
GS
-64
t
14
d(off)
= -10V
R
V
95
G
DS
- - - -
-68
= 1Ω, V
16
= - 50V
105
-72
GS
18
= -10V
115
-76
20
66
62
58
54
50
46
42
38
34
110
90
70
50
30
10
125
200
160
120
24
23
22
21
20
19
18
17
16
80
40
44
40
36
32
28
24
20
0
-36
25
0
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
t
T
V
R
V
35
2
-40
f
J
DS
G
DS
t
R
V
= 125ºC, V
f
= 1Ω, V
DS
G
= - 50V
= - 50V
= 1Ω, V
Fig. 14. Resistive Turn-on Rise Time vs.
= - 50V
45
4
-44
GS
t
t
GS
d(off)
= -10V
GS
d(off)
55
Junction Temperature
6
= -10V
IXTA76P10T IXTP76P10T
= -10V
-48
T
- - - -
- - - -
Gate Resistance
J
- Degrees Centigrade
65
8
I
I
Drain Current
D
-52
R
D
I
= - 38A, - 76A
G
- Amperes
D
- Ohms
= - 76A
10
75
-56
I
D
= - 38A
12
85
-60
14
T
T
95
J
J
= 25ºC
= 125ºC
IXTH76P10T
-64
105
16
-68
115
18
-72
125
20
300
240
180
120
60
0
75
70
65
60
55
50
45
40
35
-76