IXTH76P10T IXYS, IXTH76P10T Datasheet - Page 3

• Manufacturer Part Number: IXTH76P10T
• Description: MOSFET P-CH 100V 76A TO-247
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTH76P10T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 13700pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -76
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 13700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
-80
-70
-60
-50
-40
-30
-20
-10
-80
-70
-60
-50
-40
-30
-20
-10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
0
0
0
V
-0.2
GS
-0.4
= -10V
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. R
-40
-0.4
-0.8
-0.6
DS(on)
-80
-1.2
-0.8
Drain Current
Normalized to I
I
D
V
V
DS
- Amperes
DS
V
GS
-120
-1.6
- Volts
-1
- Volts
V
GS
= -10V
- 9V
- 8V
- 7V
= -10V
- 9V
- 8V
-1.2
-2
-160
D
-1.4
= - 38A vs.
J
J
-2.4
= 125ºC
= 25ºC
-1.6
-200
T
- 6V
- 5V
- 7V
- 6V
- 5V
J
= 125ºC
-2.8
T
J
-1.8
= 25ºC
-240
-3.2
-2
-280
-240
-200
-160
-120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
-40
-80
-70
-60
-50
-40
-30
-20
-10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
V
GS
GS
-25
= -10V
-25
= -10V
Fig. 4. R
- 9V
-5
Fig. 6. Maximum Drain Current vs.
0
0
IXTA76P10T IXTP76P10T
DS(on)
T
Junction Temperature
-10
J
- Degrees Centigrade
T
Case Temperature
25
J
25
- 8V
- Degrees Centigrade
Normalized to I
V
DS
-15
50
50
- Volts
- 7V
I
D
= - 76A
75
75
-20
IXTH76P10T
D
= - 38A vs.
100
100
I
- 6V
D
-25
= - 38A
J
= 25ºC
125
125
- 5V
150
150
-30