IRFS4010PBF International Rectifier, IRFS4010PBF Datasheet - Page 6

• Manufacturer Part Number: IRFS4010PBF
• Description: MOSFET N-CH 100V 180A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4010PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 215nC @ 10V
• Input Capacitance (ciss) @ Vds: 9575pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 375 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 143 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16. Threshold Voltage vs. Temperature
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I F = 106A
V R = 85V
T J = 25°C
T J = 125°C
I D = 250µA
I D = 1.0mA
I D = 1.0A
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T J , Temperature ( °C )
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I F = 106A
V R = 85V
T J = 25°C
T J = 125°C
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di F /dt (A/µs)
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I F = 70A
V R = 85V
T J = 25°C
T J = 125°C
I F = 70A
V R = 85V
T J = 25°C
T J = 125°C
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di F /dt (A/µs)
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di F /dt (A/µs)
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