IRFS4010PBF International Rectifier, IRFS4010PBF Datasheet - Page 4

• Manufacturer Part Number: IRFS4010PBF
• Description: MOSFET N-CH 100V 180A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4010PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 215nC @ 10V
• Input Capacitance (ciss) @ Vds: 9575pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 375 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 143 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Fig 11. Typical C
1000
100
200
180
160
140
120
100
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
80
60
40
20
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0
0.2
25
0
T J = 175°C
Case Temperature
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
20
50
Forward Voltage
0.6
T C , Case Temperature (°C)
T J = 25°C
OSS
40
75
Stored Energy
1.0
100
60
1.4
125
80
V GS = 0V
100
150
1.8
120
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1400
1200
1000
100
800
600
400
200
130
125
120
115
110
105
100
0.1
10
95
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
DC
1msec
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
10
75
100
100µsec
TOP
BOTTOM 106A
100
125
150
I D
12.5A
17A
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1000
175