IRFS4010PBF International Rectifier, IRFS4010PBF Datasheet - Page 4
![MOSFET N-CH 100V 180A D2PAK](/photos/5/50/55051/irfs4010pbf_sml.jpg)
IRFS4010PBF
Manufacturer Part Number
IRFS4010PBF
Description
MOSFET N-CH 100V 180A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFS4010PBF.pdf
(10 pages)
Specifications of IRFS4010PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.7 mOhm @ 106A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
215nC @ 10V
Input Capacitance (ciss) @ Vds
9575pF @ 50V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
180 A
Power Dissipation
375 W
Mounting Style
SMD/SMT
Gate Charge Qg
143 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFS4010PBF
Manufacturer:
IR
Quantity:
20
Part Number:
IRFS4010PBF
Manufacturer:
IR
Quantity:
20 000
4
Fig 11. Typical C
1000
100
200
180
160
140
120
100
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
80
60
40
20
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0
0.2
25
0
T J = 175°C
Case Temperature
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
20
50
Forward Voltage
0.6
T C , Case Temperature (°C)
T J = 25°C
OSS
40
75
Stored Energy
1.0
100
60
1.4
125
80
V GS = 0V
100
150
1.8
120
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1400
1200
1000
100
800
600
400
200
130
125
120
115
110
105
100
0.1
10
95
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
DC
1msec
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
10
75
100
100µsec
TOP
BOTTOM 106A
100
125
150
I D
12.5A
17A
www.irf.com
1000
175