STW12NK90Z STMicroelectronics, STW12NK90Z Datasheet - Page 3

• Manufacturer Part Number: STW12NK90Z
• Description: MOSFET N-CH 900V 11A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 880 mOhm @ 5.5, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.88 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4421-5

STW12NK90Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2.
Table 2.
Table 3.
Table 4.
Symbol
Symbol
Rthj-case
Rthj-amb
BV
V
Symbol
I
E
ESD(G-S)
E
SD
I
I
AR
DM
AS
GSO
V
V
AS
T
T
P
I
I
T
DS
GS
stg
≤ 11A, di/dt ≤ 200A/µs, V
J
D
D
tot
j
(1)
(2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Gate-source breakdown
voltage
Absolute maximum ratings
Thermal data
Avalanche characteristics
Gate-source zener diode
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
Parameter
j
= 25 °C, I
DD
≤ V
(BR)DSS
Parameter
D
Parameter
= I
C
j
max)
AR
, T
= 25°C
GS
Igs=± 1mA (open drain)
, V
j
≤ T
= 0)
DD
JMAX.
Test conditions
= 50 V)
C
C
= 25°C
= 100°C
-55 to 150
Min.
30
Value
6000
± 30
1.85
900
230
4.5
11
44
7
Max value
Typ.
500
11
Electrical ratings
0.54
300
50
Max.
W/°C
Unit
mJ
°C
W
V
A
A
V
V
A
°C/W
°C/W
Unit
Unit
mJ
°C
A
V
3/14