STW12NK95Z STMicroelectronics, STW12NK95Z Datasheet - Page 5

• Manufacturer Part Number: STW12NK95Z
• Description: MOSFET N-CH 950V 10A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK95Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 950V
• On Resistance Rds(on): 0.69ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.69 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5167-5

STW12NK95Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 7.
C
V
Symbol
Symbol
Symbol
R
CASE
V
osseq
(BR)DSS
g
t
t
increases from 0 to 80% V
I
C
I
C
d(on)
d(off)
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss eq.
t
t
oss
iss
rss
r
f
gs
gd
(1)
g
(2)
=25°C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
GS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
(see
I
V
V
Tc = 125°C
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
V
R
(see Figure 14)
V
R
(see
= 1mA, V
DD
DD
G
G
=0, V
=760V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating,
= ± 20V
= V
=4.7Ω, V
=4.7Ω, V
= 10V, I
Figure
Test conditions
Test conditions
=475V, I
=475V, I
Figure
Test conditions
GS
DS
, I
D
GS
15)
D
D
D
=0V to 760V
= 5A
14)
D
D
GS
GS
= 10A
= 100µA
= 5 A
= 0
=5A,
=5A,
=10V
=10V
GS
=0
Min.
Min.
950
Electrical characteristics
3
Min.
3500
Typ.
Typ.
3.75
0.69
280
117
113
12
58
19
60
Typ.
31
20
88
55
oss
Max.
Max.
152
±
4.5
0.9
when V
Max.
50
10
1
DS
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
5/14