STP11NM60FDFP STMicroelectronics, STP11NM60FDFP Datasheet - Page 3

• Manufacturer Part Number: STP11NM60FDFP
• Description: MOSFET N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP11NM60FDFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 35000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5392-5; STP11NM60FDFP

STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
R
Symbol
Symbol
dv/dt
I
R
thj-case
V
DM
P
V
E
V
V
T
I
SD
thj-a
T
DGR
AR
I
I
TOT
ISO
AS
GS
DS
stg
D
D
l
<11A, di/dt<400A/µs, V
(2)
(3)
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting Tj = 25°C, I
Drain-source voltage (v
Drain-gate voltage (R
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation winthstand voltage (dc)
Storage temperature
Absolute maximum ratings
Thermal resistance
Avalanche data
DD
= 80% V
Parameter
Parameter
Parameter
D
C
GS
= I
= 25°C
gs
j
AR
= 20 kΩ)
max)
(BR)DSS
= 0)
, V
C
C
DD
= 25°C
= 100°C
= 35V)
D²PAK/I²PAK
D²PAK/I²PAK
TO-220/
TO-220
0.88
160
0.78
11
44
--
7
–65 to 150
Value
Value
Value
±30
62.5
600
600
300
350
20
5.5
TO-220FP
TO-220FP
Electrical ratings
11
44
2500
0.28
3.57
7
35
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
°C
mJ
°C
W
A
V
V
V
A
A
A
V
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