STB20NM50-1 STMicroelectronics, STB20NM50-1 Datasheet - Page 13
![MOSFET N-CH 550V 20A I2PAK](/photos/1/39/13917/497-i2_pak__to-262_sml.jpg)
STB20NM50-1
Manufacturer Part Number
STB20NM50-1
Description
MOSFET N-CH 550V 20A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB20NM50-1.pdf
(14 pages)
Specifications of STB20NM50-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
1480pF @ 25V
Power - Max
192W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
192 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5382-5
STB20NM50-1
STB20NM50-1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB20NM50-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB20NM50-1
Manufacturer:
ST
Quantity:
20 000
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
5
Revision history
Table 8.
09-Sep-2004
04-Sep-2006
15-Dec-2006
08-Jan-2007
26-Jan-2007
Date
revision history
Revision
10
11
12
13
9
Final version
The document has been reformatted
Modified
Modified value in order code
Modified
Table 7.: Source drain diode
Table 6.: Switching times
Changes
Revision history
13/14