IXTA102N15T IXYS, IXTA102N15T Datasheet - Page 6

• Manufacturer Part Number: IXTA102N15T
• Description: MOSFET N-CH 150V 102A TO-263
• Manufacturer: IXYS

Specifications of IXTA102N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 455W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 102 A
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 5220
• Qg, Typ, (nc): 87
• Trr, Typ, (ns): 97
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100
26
25
24
23
22
21
20
90
80
70
60
50
40
30
20
10
19
18
17
16
15
14
13
12
11
10
0
50
25
2
t
R
V
Switching Times vs. Gate Resistance
t
T
V
f
55
Switching Times vs. Drain Current
DS
G
r
J
DS
R
V
V
4
= 3.3Ω, V
35
= 125ºC, V
G
GS
DS
= 75V
= 75V
= 3.3Ω
Rise Time vs. Junction Temperature
60
= 10V
= 75V
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
6
65
GS
t
t
Fig. 13. Resistive Turn-on
d(off)
d(on)
GS
= 10V
8
55
T
= 10V
70
- - - -
J
- - - -
R
- Degrees Centigrade
I
G
D
10
- Ohms
75
65
- Amperes
80
12
75
I
D
I
D
= 102A
85
= 102A
14
85
I
T
D
J
T
90
= 25ºC
= 51A
J
= 125ºC
16
95
I
D
95
= 51A
18
105
100 105
115
20
42
38
34
30
26
22
18
32
30
28
26
24
22
20
18
16
14
12
125
280
240
200
160
120
30
29
28
27
26
25
24
23
22
21
20
18
17
16
15
14
13
12
80
40
0
25
50
Switching Times vs. Junction Temperature
2
I
D
t
R
V
= 51A
t
T
V
R
V
V
Switching Times vs. Gate Resistance
35
55
f
f
J
DS
DS
G
GS
DS
G
4
= 125ºC, V
= 3.3Ω
= 3.3Ω, V
= 75V
= 10V
= 75V
= 75V
I
45
60
D
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
= 102A
6
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Rise Time vs. Drain Current
I
D
Fig. 14. Resistive Turn-on
t
t
55
= 102A
65
GS
d(off)
d(off)
T
GS
J
8
= 10V
- Degrees Centigrade
= 10V
- - - -
- - - -
70
65
I
R
D
10
G
- Amperes
- Ohms
75
75
12
T
T
J
80
85
J
= 125ºC
= 25ºC
14
85
95
I
16
D
90
105
= 51A
18
95
115
100
20
125
160
140
120
100
80
60
40
20
40
38
36
34
32
30
28
26
24
22
20
105