IXTA102N15T IXYS, IXTA102N15T Datasheet - Page 5

• Manufacturer Part Number: IXTA102N15T
• Description: MOSFET N-CH 150V 102A TO-263
• Manufacturer: IXYS

Specifications of IXTA102N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 455W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 102 A
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 5220
• Qg, Typ, (nc): 87
• Trr, Typ, (ns): 97
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
10,000
1,000
300
275
250
225
200
175
150
125
100
160
140
120
100
100
75
50
25
80
60
40
20
10
0
0
0.4
3.5
0
f
= 1 MHz
0.5
4.0
5
Fig. 9. Forward Voltage Drop of
0.6
4.5
10
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
= 150ºC
0.7
T
Intrinsic Diode
J
5.0
15
= 150ºC
V
- 40ºC
GS
V
V
25ºC
0.8
SD
DS
- Volts
5.5
- Volts
20
- Volts
0.9
6.0
T
25
J
1.0
C iss
C oss
C rss
= 25ºC
6.5
30
1.1
7.0
35
1.2
7.5
1.3
40
1000.0
100.0
10.0
120
110
100
1.0
0.1
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
V
I
I
T
T
Single Pulse
D
G
DS
J
C
10
= 51A
= 10mA
20
= 175ºC
= 25ºC
= 75V
Limit
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
20
40
Fig. 8. Transconductance
T
Fig. 10. Gate Charge
J
10
30
= - 40ºC
Q
60
G
I
- NanoCoulombs
D
V
40
DS
- Amperes
25ºC
80
- Volts
150ºC
50
100
DC
100
60
IXYS REF: F_102N15T(6E)90-30-08
120
25µs
100µs
1ms
10ms
100ms
70
140
80
1000
160
90