STB25NM60N STMicroelectronics, STB25NM60N Datasheet - Page 7
![MOSFET N-CH 600V 21A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB25NM60N
Manufacturer Part Number
STB25NM60N
Description
MOSFET N-CH 600V 21A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB25NM60N.pdf
(18 pages)
Specifications of STB25NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 50V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5003-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB25NM60N
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB25NM60N
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STB25NM60N-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB25NM60N-1
Manufacturer:
ST
Quantity:
20 000
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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