STB23NM60ND STMicroelectronics, STB23NM60ND Datasheet - Page 16

• Manufacturer Part Number: STB23NM60ND
• Description: MOSFET N-CH 600V 19.5A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB23NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 50V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8472-2

Packaging mechanical data
5
16/18
Packaging mechanical data
DIM.
D1
A0
B0
K0
P0
P1
P2
W
D
E
F
R
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
2
mm
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
12.1
0.35 0.0098 0.0137
24.3
11.6
1.6
5.0
4.1
2.1
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
Doc ID 14367 Rev 3
DIM.
A
B
C
D
G
N
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
STB/I/F/P/W23NM60ND
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197