STV160NF03LT4 STMicroelectronics, STV160NF03LT4 Datasheet

STV160NF03LT4

Manufacturer Part Number

STV160NF03LT4

Description

MOSFET N-CH 30V 160A POWERSO-10

Manufacturer

STMicroelectronics

Series

STripFET™r

Datasheet

1.STV160NF03LT4.pdf (9 pages)

Specifications of STV160NF03LT4

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.8 mOhm @ 80A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

160A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

140nC @ 10V

Input Capacitance (ciss) @ Vds

4700pF @ 25V

Power - Max

210W

Mounting Type

Surface Mount

Package / Case

PowerSO-10 Exposed Bottom Pad

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0019 Ohms

Forward Transconductance Gfs (max / Min)

210 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 15 V

Continuous Drain Current

160 A

Power Dissipation

210 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

497-3252-2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

STV160NF03LT4

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

STV160NF03LT4

Manufacturer:

Quantity:

20 000

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DESCRIPTION

The STV160NF03L represents the second gener-

ation of Application Specific STMicroelectronics

well established STripFET™ process based on a

very unique strip layout design. The resulting

MOSFET shows unrivalled high packing density

with ultra low on-resistance and superior switching

charactestics. Process simplification also trans-

lates into improved manufacturing reproducibility.

This device is particularly suitable for high current,

low voltage switching application where efficiency

is crucial

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

November 2002

STV160NF03L

TYPICAL R

LOW THRESHOLD DRIVE

ULTRA LOW ON-RESISTANCE

ULTRA FAST SWITCHING

100% AVALANCHE TESTED

VERY LOW GATE CHARGE

LOW PROFILE, VERY LOW PARASITIC

INDUCTANCE PowerSO-10 PACKAGE

BUCK CONVERTERS IN HIGH

PERFORMANCE TELECOM AND VRMs DC-

DC CONVERTERS

Symbol

DGR

TOT

(**)

stg

TYPE

( )

(1)

Drain-source Voltage (V

Drain-gate Voltage (R

Gate- source Voltage

Drain Current (continuos) at T

Drain Current (pulsed)

Total Dissipation at T

Derating Factor

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

(on) = 0.0019

30 V

DSS

N-CHANNEL 30V - 0.0019 - 160A PowerSO-10

< 0.0028

DS(on)

Parameter

= 25°C

= 20 k )

= 0)

= 25°C

= 100°C

160 A

STripFET™ POWER MOSFET

(1) Starting T

(**)Limited only maximum junction temperature allowed by

PowerSO-10

CONNECTION DIAGRAM (TOP VIEW)

INTERNAL SCHEMATIC DIAGRAM

=25°C , I

PowerSO-10

= 80A, V

STV160NF03L

–65 to 175

Value

± 15

160

640

210

175

113

1.4

= 20V

W/°C

Unit

°C

1/9

Related parts for STV160NF03LT4

STV160NF03LT4 Summary of contents

Page 1

... LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE DESCRIPTION The STV160NF03L represents the second gener- ation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics ...

Page 2

STV160NF03L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Turn-off-Delay Time d(off) Fall Time t ...

Page 4

STV160NF03L Output Characteristics Tranconductance Gate Charge vs Gate-source Voltage 4/9 Tranfer Characteristics Static Drain-Source On Resistance Capacitance Variations ...

Page 5

Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Basic Schematic For Motherboard VRM Whith Synchronous Rectification Normalized On Resistance vs Temperature Basic Schematic Mosfets Switch Used In Secondary Side Of a Froward Convert STV160NF03L 5/9 ...

Page 6

STV160NF03L 6/9 ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit STV160NF03L ...

Page 8

STV160NF03L DIM. MIN. A 3.35 A1 0.00 B 0.40 C 0.35 D 9. 9.30 E1 7.20 E2 7.20 E3 6.10 E4 5. 13. ...

Page 9

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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