STV270N4F3 STMicroelectronics, STV270N4F3 Datasheet - Page 7

• Manufacturer Part Number: STV270N4F3
• Description: MOSFET N-CH 40V 270A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV270N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 270A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 270A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.00125ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7031-2

STV270N4F3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
SD
0.75
0.55
0.45
0.90
0.85
0.80
0.70
0.60
0.40
0.95
0.65
0.50
(V)
0 20
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
T
40
J
=-50°C
60 80 100 120 140 160 180
T
J
=25°C
T
J
=175°C
Doc ID 14089 Rev 6
AM04229v1
I
SD
(A)
Figure 11. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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