IRF7455 International Rectifier, IRF7455 Datasheet - Page 4

• Manufacturer Part Number: IRF7455
• Description: MOSFET N-CH 30V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7455

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 3480pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7455

IRF7455
1000
4
100
0.1
10
6000
5000
4000
3000
2000
1000
1
0.2
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
V
T = 150 C
SD
0.6
J
V
DS
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
T = 25 C
1.0
J
=
=
=
=
0V,
C
C
C
gs
gd
ds
°
C
C
+ C
+ C
C
10
1.4
oss
rss
iss
f = 1MHz
gd ,
gd
C
ds
V
1.8
GS
SHORTED
= 0 V
2.2
100
1000
100
12
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
15A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
°
G
20
, Drain-to-Source Voltage (V)
1
BY R
40
DS(on)
FOR TEST CIRCUIT
V
SEE FIGURE
DS
www.irf.com
10
= 24V
60
10us
100us
1ms
10ms
13
80
100