IRF7455 International Rectifier, IRF7455 Datasheet - Page 2

• Manufacturer Part Number: IRF7455
• Description: MOSFET N-CH 30V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7455

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 3480pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7455

Diode Characteristics
IRF7455
Dynamic @ T
Avalanche Characteristics
Static @ T
g
Q
Q
Q
t
t
t
t
C
C
C
E
I
E
I
I
V
t
Q
V
R
V
I
I
AR
SM
d(on)
r
d(off)
f
S
rr
DSS
GSS
V
fs
AS
AR
(BR)DSS
GS(th)
iss
oss
rss
SD
DS(on)
g
gs
gd
rr
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
––– 0.00600.0075
––– 0.0069 0.009
––– 0.010 0.020
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
0.6
44
–––
–––
–––
30
–––
–––
0.029
3480 –––
–––
–––
870
100
–––
–––
–––
–––
–––
–––
–––
––– -200
8.9
37
13
17
18
51
44
64
99
–––
–––
–––
–––
–––
–––
–––
150
–––
100
200
2.0
1.2
13
20
2.5
120
96
–––
20
56
ns
V/°C
µA
nA
nC
pF
nC
ns
V
V
S
A
V
Typ.
–––
–––
–––
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
MOSFET symbol
integral reverse
D
D
Reference to 25°C, I
J
J
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
G
= 15A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= V
= 24V, V
= 24V, V
= 10V, I
= 24V
= 5.0V,
= 15V
= 4.5V
= 0V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
GS
, I
D
S
F
D
D
D
Conditions
D
D
= 250µA
GS
GS
Conditions
Conditions
= 2.5A, V
= 2.5A
= 250µA
= 15A
= 15A
= 12A
= 3.5A
Max.
0.25
200
= 0V
= 0V, T
15
www.irf.com
D
GS
= 1mA
J
= 125°C
G
= 0V
Units
mJ
mJ
A
D
S