STP100NF04 STMicroelectronics, STP100NF04 Datasheet - Page 9

• Manufacturer Part Number: STP100NF04
• Description: MOSFET N-CH 40V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP100NF04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7497-5; STP100NF04

STB100NF04 - STP100NF04
Figure 17. Allowable Iav vs. Time in Avalanche
The previous curve give the safe operating area for unclamped inductive loads, single pulse
or repetitive, under the following conditions:
P
E
Where:
I
P
t
To de rate above 25°C, at fixed I
I
Where:
Z
equal to T
AV
AV
AV
th
D(AVE)
AS(AR)
D(AVE)
=2*(T
= K*R
is the Time in Avalanche
is the Allowable Current in Avalanche
= 0.5*(1.3*BV
is the Average Power Dissipation in Avalanche (Single Pulse)
= P
jmax
th
AV
is the value coming from Normalized Thermal Response at fixed pulse width
D(AVE)
- T
CASE
* t
AV
) / (1.3*BV
DSS
*I
AV
)
DSS
AV
, the following equation must be applied:
* Z
th
)
Electrical characteristics
9/17