STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 6
STB21NM50N
Manufacturer Part Number
STB21NM50N
Description
MOSFET N-CH 500V 18A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM50N.pdf
(18 pages)
Specifications of STB21NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
18 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5783-2
STB21NM50N
STB21NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM50N-1
Manufacturer:
STMicroelectronics
Quantity:
1 973
Company:
Part Number:
STB21NM50N-1
Manufacturer:
ST
Quantity:
12 500
Electrical characteristics
2.1
6/18
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characteristics
Electrical characteristics (curves)
Safe operating area for TO-220FP
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Transfer characteristics
Thermal impedance for TO-220FP