IXFP16N50P IXYS, IXFP16N50P Datasheet - Page 4

MOSFET N-CH 500V 16A TO-220

IXFP16N50P

Manufacturer Part Number
IXFP16N50P
Description
MOSFET N-CH 500V 16A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFP16N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2480
Qg, Typ, (nc)
43
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP16N50P
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100
26
24
22
20
18
16
14
12
10
10
10
8
6
4
2
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
T
R
J
C
J
Fig. 11. Forward-Bias Safe Operating Area
V
I
I
DS(on)
= 150ºC
= - 40ºC
= 25ºC
D
G
DS
125ºC
2
= 8A
= 10mA
5
25ºC
= 250V
Limit
4
10
Fig. 7. Transconductance
6
Q
Fig. 9. Gate Charge
15
G
I
- NanoCoulombs
D
V
8
- Amperes
DS
20
- Volts
DC
100
10
25
12
30
14
35
16
25µs
100µs
1ms
10m
40
18
1000
20
45
10,000
1,000
1.00
0.10
0.01
70
60
50
40
30
20
10
100
0
0.0001
10
0.3
1
0
0.4
f = 1 MHz
Fig. 12. Maximum Transient Thermal
5
Fig. 8. Forward Voltage Drop of
0.001
IXFA 16N50P IXFH 16N50P
0.5
10
Fig. 10. Capacitance
Pulse W idth - Seconds
0.6
T
Intrinsic Diode
J
= 125ºC
V
15
0.01
V
SD
Resistance
DS
0.7
- Volts
- Volts
20
IXYS REF: F_16N50P (5J-745) 11-30-05-A.xls
0.8
0.1
25
IXFP 16N50P
0.9
T
J
= 25ºC
C iss
C oss
C rss
30
1
1
35
1.1
10
1.2
40

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