IXFP16N50P IXYS, IXFP16N50P Datasheet - Page 2

MOSFET N-CH 500V 16A TO-220

IXFP16N50P

Manufacturer Part Number
IXFP16N50P
Description
MOSFET N-CH 500V 16A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFP16N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2480
Qg, Typ, (nc)
43
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP16N50P
Manufacturer:
IXYS
Quantity:
18 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
TO-247 (IXFH) Outline
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
RM
one or moreof the following U.S. patents:
Terminals: 1 - Gate
1
3 - Source
2
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
(TO-247)
F
F
(TO-220)
DS
GS
GS
GS
GS
R
G
3
= I
= 16 A, -di/dt = 100 A/µs
= 100 V
= 20 V; I
= 10 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
2 - Drain
Tab - Drain
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
, pulse test
1
2
DSS
1
2
DSS
, I
4,931,844
5,017,508
5,034,796
20.80
15.75
19.81
, I
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
D
Millimeter
4.7
2.2
2.2
1.0
D
.4
= 0.5 I
= I
(T
(T
21.46
16.26
20.32
D25
Max.
J
J
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
.8
D25
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Min.
Min.
5,237,481
5,381,025
5,486,715
Max.
8
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
Characteristic Values
Characteristic Values
2250
0.21
Typ.
Typ.
0.25
240
130
0.6
12
23
25
70
22
43
15
12
16
6,162,665
6,259,123 B1
6,306,728 B1
6
Max.
Max.
200
0.42° C/W
1.5
16
35
° C/W
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µC
ns
S
A
A
V
A
IXFA 16N50P IXFH 16N50P
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
3 - Source
6,727,585
6,759,692
6,771,478 B2
IXFP 16N50P
2 - Drain
4 - Drain

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