STW5NK100Z STMicroelectronics, STW5NK100Z Datasheet - Page 9

• Manufacturer Part Number: STW5NK100Z
• Description: MOSFET N-CH 1000V 3.5A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW5NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1154pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7623-5; STW5NK100Z

STP5NK100Z, STF5NK100Z, STW5NK100Z
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Figure 19. Unclamped inductive load test
Figure 21. Switching times test circuit for
Figure 23. Test circuit for inductive load
Test circuits
circuit
resistive load
switching and diode recovery times
Doc ID 10850 Rev 5
Figure 20. Unclamped inductive waveform
Figure 22. Gate charge test circuit
Test circuits
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