STP13NK60Z STMicroelectronics, STP13NK60Z Datasheet - Page 6
STP13NK60Z
Manufacturer Part Number
STP13NK60Z
Description
MOSFET N-CH 600V 13A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STP13NK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
2030pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
13A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
13 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3182-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP13NK60Z
Manufacturer:
TOSHIBA
Quantity:
20 000
Part Number:
STP13NK60Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP13NK60ZFP
Manufacturer:
OMRON
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1 000
Company:
Part Number:
STP13NK60ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP13NK60ZFP
Manufacturer:
ST
Quantity:
20 000
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
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